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Metal Aluminium Oxide Semiconductor

См. также в других словарях:

  • Metal Oxide Semiconductor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… …   Deutsch Wikipedia

  • Metal Oxide Semiconductor Field Effect Transistor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… …   Deutsch Wikipedia

  • Double Diffused Metal Oxide Semiconductor Field Effect Transistor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… …   Deutsch Wikipedia

  • Semiconductor device fabrication — Semiconductor manufacturing processes 10 µm 1971 3 µm 1975 1.5 µm 1982 …   Wikipedia

  • Metal rectifier — Selenium rectifier A metal rectifier is an early type of semiconductor rectifier in which the semiconductor is copper oxide or selenium. They were used in power applications to convert alternating current to direct current in devices such as… …   Wikipedia

  • Zinc oxide — Other names Zinc white Calamine Identifiers …   Wikipedia

  • Beryllium oxide — Preferred IUPAC name Beryllium oxide[ …   Wikipedia

  • Indium(III) oxide — Chembox new Name = Indium(III) oxide ImageName = Indium(III) oxide OtherNames = indium trioxide Section1 = Chembox Identifiers CASNo = 1312 43 2 Section2 = Chembox Properties Formula = In2O3 MolarMass = 277.64 g/mol Appearance = yellowish green… …   Wikipedia

  • Magnetic semiconductor — Magnetic semiconductors are semiconductor materials that exhibit both ferromagnetism (or a similar response) and useful semiconductor properties. If implemented in devices, these materials could provide a new type of control of conduction.… …   Wikipedia

  • Gate oxide — The gate oxide is the third region of the MOSFET between the source and drain. It is a thin layer of pure, defect free, 5 200 nm thick thermally grown oxide. It serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm… …   Wikipedia

  • Vacuum tube — This article is about the electronic device. For experiments in an evacuated pipe, see free fall. For the transport system, see pneumatic tube. Modern vacuum tubes, mostly miniature style In electronics, a vacuum tube, electron tube (in North… …   Wikipedia

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